PN Junction Semiconductor Co. Ltd. Asset Profile

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Year established

2018

Location

Hangzhou Zhejiang China

Primary Industry

Semiconductors

About

Established in 2018 and based in Hangzhou, China, PN Junction Semiconductor Co. Ltd. operates as a semiconductor power device design and developer that focuses on silicon carbide and gallium nitride power devices. The company has more than 80 intellectual property and 22 utility model patents. It also obtained International Third Generation Semiconductor Professional Competition Global Finals Winner Award and "China Core Power" Most Investment Value Award. In August 2023, PN Junction Semiconductor Co. Ltd. completed a strategic investment from new investor Dong Feng Asset Management. PN Junction Semiconductor Co. Ltd. has released over 100 different models of silicon carbide diodes, silicon carbide MOSFETs, silicon carbide power modules, and GaN HEMT products on three voltage platforms: 650V, 1200V, and 1700V. The products can be used in fields such as electric vehicles, IT equipment power supplies, photovoltaic inverters, energy storage systems, and industrial applications.

Current Investors

CDF-Capital, Allin Capital, Wenqin Capital

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Primary Industry

Semiconductors

Sub Industries

Automobiles, Other Vehicles & Parts, Electronic Components, Integrated Circuits, Fabless Semiconductors

Website

www.pnjsemi.com

Verticals

Manufacturing

Company Stage

Series A

Total Amount Raised

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